FDC654P mosfet equivalent, p-channel mosfet.
* −3.6 A, −30 V. RDS(ON) = 75 mW @ VGS = −10 V
RDS(ON) = 125 mW @ VGS = −4.5 V
* Low Gate Charge (6.2 nC typical)
* High Performance Trench Technology for Ext.
Features
* −3.6 A, −30 V. RDS(ON) = 75 mW @ VGS = −10 V
RDS(ON) = 125 mW @ VGS = −4.5 V
* Low Gate Charge (6.2 .
This P−Channel Logic Level MOSFET is produced using onsemi’s
advanced POWERTRENCH process. It has been optimized for battery power management applications.
Features
* −3.6 A, −30 V. RDS(ON) = 75 mW @ VGS = −10 V
RDS(ON) = 125 mW @ VGS = −4.5 V
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